Embedded type package of power semiconductor device

Details Embedded type package of power semiconductor device Embedded type package of power semiconductor device

2001-06-05

2002-09-24

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S692000, C257S693000, C257S694000, C257S699000, C257S707000

Reexamination Certificate

active

06455929

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to an embedded type package of power semiconductor device, especially to an embedded type package of power semiconductor device, which can prevent crack and misalignment problem and is advantageous for high temperature operation.
BACKGROUND OF THE INVENTION
The electronic apparatus employing power semiconductor devices requires high-density assembling and excellent heatsink. Therefore, embedded type packages are developed for power semiconductor devices such as high power rectifiers. For example, in automobile, 6 to 8 power rectifiers are used in an AC generator.
FIG. 1
shows a prior art embedded type package in U.S. Pat. No. 5,005,068 disclosed by Wasmer and issued in Apr. 2, 1991. The embedded type package
1
a
comprises a nailhead
11
a
and a cup
12
a
and a semiconductor dice
13
a
therebetween. The semiconductor dice
13
a
is covered with passivant
14
a
on the perimeter thereof. The cup
12
a
has a mold lock
15
a
on top surface thereof and the cavity formed by the wall
16
a
is filled with encapsulant
17
a.
As shown in this figure, the embedded type package
1
a
is subjected to an axial force
18
a
such that the aluminum plate
19
a
and the cup
12
a
are coupled by compression fit. Therefore, the aluminum plate
19
a
and the cup
12
a
do not require mechanical and electrical contact through solder or other binder.
However, in above-mentioned embedded type package
1
a,
the semiconductor dice
13
a
has the risk of crack. More particularly, the semiconductor dice
13
a
has locally high stress on one corner or a plurality of corners thereof when a radial force
20
is applied. The problem of crack is worse after several post processes are performed.
The above-mentioned embedded type package
1
a
further has the problem of misalignment. More particularly, the embedded type package
1
a
may be aligned in wrong direction before the embedding force is applied. The embedded type package
1
a
and the aluminum plate
19
a
have no optimal contact therebetween. The package weight, center of gravity, and shape of the embedded type package
1
a
are influenced.
Moreover, the above-mentioned embedded type package
1
a
further has the problem of thermal mechanical fatigue. The semiconductor dice
13
a
has fatigue after repeated cold- and hot-temperature treatment.
Moreover, some embedded type package
1
a
employs plastic package to overcome above problem. However, the plastic package is not suitable for high-temperature or high humidity environment.
SUMMARY OF THE INVENTION
It is the object of the present invention to provide an embedded type package of power semiconductor device, which can prevent crack and misalignment problem and is advantageous for high temperature operation.
To achieve above object, the present invention provides an embedded type package of power semiconductor device having a semiconductor device and a cup. One side of the semiconductor device is connected to a leader and another side of the semiconductor device is connected to the cup. The cup has guiding bevel and annulus groove on bottom side thereof. The cup further has an embedding part on outer side thereof. The cup further comprises a heatsink connected to the semiconductor device; and a cone-shaped inner wall bordered to the heatsink and having a mold lock higher than the semiconductor device.


REFERENCES:
patent: 5656864 (1997-08-01), Mitsue et al.

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