Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Patent
1998-01-13
1999-09-21
Williams, Alexander Oscar
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
257 77, 257758, 257382, 257347, 257350, 257353, 257713, H05K 720, H01L 2334
Patent
active
059557818
ABSTRACT:
A semiconductor chip structure includes a substrate, at least one thermal conductor embedded within the semiconductor chip structure, the thermal conductor providing electrical insulation and a plurality of devices formed within the structure adjacent to the at least one thermal conductor such that during operation heat produced in the devices is transferred into and through the at least one thermal conductor to reduce an operating temperature of the devices. This structure is particularly useful in silicon-on insulator devices. A method of forming embedded thermal conductors in a semiconductor chip includes the steps of providing a substrate having an oxide layer formed thereon, etching trenches into the oxide layer, depositing diamond to fill the trenches to form thermal conductors contacting the substrate and forming devices and contacts adjacent to the thermal conductors for providing heat flow paths to reduce an operating temperature of the devices.
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B. Edholm et al., "Silicon-on-Diamond MOS-Transistors with Thermally Grown Gate Oxide", IEEE, International Conference, Oct. 1997, pp. 30-31.
Joshi Rajiv Vasant
Reohr William Robert
International Business Machines - Corporation
Williams Alexander Oscar
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