Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-07-09
2011-12-20
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S077000, C257SE21102, C257SE21134, C257SE21170
Reexamination Certificate
active
08080836
ABSTRACT:
A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.
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Kar Aravinda
Quick Nathaniel R.
Salama Islam A.
Fahmy Wael
Frijouf Rust & Pyle P.A.
Ingham John C
University of Central Florida
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