Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2010-11-09
2011-12-06
Li, Meiya (Department: 2811)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S145000, C438S169000, C438S170000, C438S188000, C438S189000, C438S197000, C438S200000, C438S234000, C438S666000, C438S947000, C257S002000, C257S005000, C257S295000, C257S298000, C257S529000, C257S536000, C257S537000, C257SE27004, C257SE31029, C257SE45002
Reexamination Certificate
active
08071396
ABSTRACT:
An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
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Choi Kyu-Jeong
Lee Nam-Yeal
Lee Seung-Yun
Park Young Sam
Ryu Sangouk
Electronics and Telecommunications Research Institute
Ladas & Parry LLP
Li Meiya
LandOfFree
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