Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2006-09-06
2008-11-18
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C257S676000
Reexamination Certificate
active
07452755
ABSTRACT:
An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
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Chen Kuan-Chun
Hu Shu-Kai
Huang Jin-Quan
Lin Chun-Liang
Su Yan-Kuin
Doan Theresa T
National Cheng Kung University
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