Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-05-10
2005-05-10
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S758000, C257S767000, C257S774000
Reexamination Certificate
active
06891269
ABSTRACT:
An embedded electroconductive layer is disclosed which comprises an opening part or a depressed part3formed in an insulating film2on a substrate1, a barrier layer for covering the opening part or the depressed part, a metal growth promoting layer5on the barrier layer, and an electroconductive layer6embedded in the opening part or the depressed part via the barrier layer4and the metal growth promoting layer5.
REFERENCES:
patent: 4910169 (1990-03-01), Hoshino
patent: 4990997 (1991-02-01), Nishida
patent: 5070036 (1991-12-01), Stevens
patent: 5227335 (1993-07-01), Holschwandner et al.
patent: 5232872 (1993-08-01), Ohba
patent: 5290733 (1994-03-01), Hayasaka et al.
patent: 5378660 (1995-01-01), Ngan et al.
patent: 5393565 (1995-02-01), Suzuki et al.
patent: 5407698 (1995-04-01), Emesh
patent: 5429989 (1995-07-01), Fiordalice et al.
patent: 5464666 (1995-11-01), Fine et al.
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5552341 (1996-09-01), Lee
patent: 5612254 (1997-03-01), Mu et al.
patent: 5614756 (1997-03-01), Forouhi et al.
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5641985 (1997-06-01), Tamura et al.
patent: 5652464 (1997-07-01), Liao et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5759915 (1998-06-01), Matsunaga et al.
patent: 5793057 (1998-08-01), Summerfelt
patent: 5801095 (1998-09-01), Huang et al.
patent: 5801098 (1998-09-01), Fiordalice et al.
patent: 5903053 (1999-05-01), Iijima et al.
patent: 5998870 (1999-12-01), Lee et al.
patent: 03-278431 (1991-12-01), None
patent: 06-61229 (1994-03-01), None
John A.T. Norman, David A. Roberts et al., Enhanced Deposition of Copper Films by CVD—Advanced Metalization for ULSI Application pp. 57-62.
Susan L. Cohen, Michael Liehr and Srinandan Kasi, Mechanisms of copper chemical vapor depositions, Appl. Phys. Lett. 60 (1), Jan. 6, 1992, pp. 50-52.
Fourson George
Fujitsu LImited
Greer Burns & Crain Ltd
Maldonado Julio J.
LandOfFree
Embedded electroconductive layer structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Embedded electroconductive layer structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Embedded electroconductive layer structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3444325