Embedded dielectric film for quantum efficiency enhancement in a

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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2502141, 257649, H01L 2700

Patent

active

061304220

ABSTRACT:
The present invention is an image sensor and its fabricating method. The image sensor comprises a photodiode and a dielectric structure. The photodiode is responsive to an amount of incident light from a light source. The dielectric structure is on top of the photodiode and is placed between the photodiode and an inter-level dielectric (ILD) oxide layer. The dielectric structure contains a dielectric material. The ILD oxide layer is made of an oxide material and has an ILD oxide thickness.

REFERENCES:
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patent: 5448097 (1995-09-01), Mizushima et al.
patent: 5463225 (1995-10-01), Kwasnick et al.
patent: 5811872 (1998-09-01), Machida et al.

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