Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2008-04-22
2008-04-22
Tran, Long K. (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
C438S250000, C257S532000, C257S758000, C257S773000, C257SE21008, C361S303000
Reexamination Certificate
active
11316087
ABSTRACT:
Embedded capacitors comprise a bimetal foil (500) that includes a first copper layer (205) and an aluminum layer (210) on the first copper layer. The aluminum layer has a smooth side adjacent the first copper layer and a high surface area textured side (215) opposite the first copper layer. The bimetal foil further includes an aluminum oxide layer (305) on the high surface area textured side of the aluminum layer, a conductive polymerlayer (420) on the aluminum oxide layer, and a second copper layer (535) overlying the aluminum oxide layer. The bimetal foil may be embedded in a circuit board (700) to form high value embedded capacitors.
REFERENCES:
patent: 6346335 (2002-02-01), Chen et al.
patent: 6534133 (2003-03-01), Kaloyeros et al.
patent: 6540900 (2003-04-01), Kinard et al.
patent: 6605314 (2003-08-01), Lessner et al.
patent: 6744621 (2004-06-01), Lessner et al.
patent: 6808615 (2004-10-01), Lessner et al.
patent: 6882544 (2005-04-01), Nakamura et al.
patent: 2004/0256731 (2004-12-01), Mao et al.
patent: 2005/0150596 (2005-07-01), Vargo et al.
patent: 2005/0217893 (2005-10-01), Noguchi et al.
patent: 2006/0120014 (2006-06-01), Nakamura et al.
Chelini Remy J.
Croswell Robert T.
Dunn Gregory J.
Lessner Philip M.
Prevallet Michael D.
Motorola Inc.
Tran Long K.
LandOfFree
Embedded capacitors and methods for their fabrication and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Embedded capacitors and methods for their fabrication and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Embedded capacitors and methods for their fabrication and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3908667