Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2008-04-22
2008-04-22
Tran, Long K. (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
C438S250000, C257S532000, C257S758000, C257S773000, C257SE21008, C361S303000
Reexamination Certificate
active
07361568
ABSTRACT:
Embedded capacitors comprise a bimetal foil (500) that includes a first copper layer (205) and an aluminum layer (210) on the first copper layer. The aluminum layer has a smooth side adjacent the first copper layer and a high surface area textured side (215) opposite the first copper layer. The bimetal foil further includes an aluminum oxide layer (305) on the high surface area textured side of the aluminum layer, a conductive polymerlayer (420) on the aluminum oxide layer, and a second copper layer (535) overlying the aluminum oxide layer. The bimetal foil may be embedded in a circuit board (700) to form high value embedded capacitors.
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Chelini Remy J.
Croswell Robert T.
Dunn Gregory J.
Lessner Philip M.
Prevallet Michael D.
Motorola Inc.
Tran Long K.
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