Embedded bi-layer structure for attenuated phase shifting mask

Details Embedded bi-layer structure for attenuated phase shifting mask Embedded bi-layer structure for attenuated phase shifting mask

2006-04-18

2006-04-18

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07029802

ABSTRACT:
An embedded bi-layer structure for an attenuated phase-shifting mask comprises an inner layer with lower transmittance, formed on a substrate; and an outer layer, formed on the inner layer, with higher transmittance and being more chemically stable than the inner layer. A method of forming such an embedded bi-layer structure is provided.

REFERENCES:
patent: 5914202 (1999-06-01), Nguyen et al.

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