Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1989-11-13
1991-06-25
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504923, 250423R, 250427, 31511181, 313230, 3133631, H01J 37317
Patent
active
050269976
ABSTRACT:
An ion source for creating an ion beam. The source includes an ionization chamber having one wall that defines a generally elliptical opening for allowing ions to exit the ionization chamber. Use of an elliptical (in section) ion beam has advantages over a rectangular ion beam which allow the integrity of a relatively high current ion beam to be maintained as ions travel to a beam treatment workstation. A dual configuration extraction electrode assembly also provides for a range of extraction energies from a single source.
REFERENCES:
patent: 2700107 (1955-01-01), Luce
patent: 4831270 (1989-05-01), Weisenberger
Berman Jack I.
Eaton Corporation
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