Ellipsometric control of material growth

Fishing – trapping – and vermin destroying

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156601, 356369, H01Q 2166

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050913204

ABSTRACT:
A method and apparatus for controlling the growth of a multispecies film. During the film growth, an ellipsometer continuously monitors the surface on which the film is growing. The ellipsometer data is used to calculate the effective complex dielectric constant of the thin-film/substrate structure. A sequence of such data is used in a model calculation to determine the composition of the top portion of the thin film. The measured composition is compared with the target composition and the amount supplied of one of the species is correspondingly changed.

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patent: 4934788 (1990-06-01), Southwell
Qualitative and quantitative assessment of the growth of (Al, Ga)As-GaAs heterostructures by in-situ ellipsometry, G. Laurence, F. Hottier and J. Hallais, Revue Phy. Appl. 16 (1981) 579-589.
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B. Drevillon, "In situ analysis of the growth of semiconductor material by phase modulated ellipsometry from UV to IR," appearing in Surface and Interface Analysis of Microelectronic Materials Processing and Growth, SPIE Proceedings, 1989, vol. 1186, pp. 110-121.
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