Elimination of stacking faults in silicon devices: a gettering p

Metal treatment – Compositions – Heat treating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148175, 148188, H01L 21265

Patent

active

039973689

ABSTRACT:
Described are procedures for fabricating silicon devices which prevent the formation and/or activation of stacking fault nucleation sites during high temperature processing steps, such as steam oxidation of silicon wafers. The procedures, which take place before such high temperature steps, include forming on the back surface of the wafer a stressed layer and then annealing the wafer for a time and at a temperature effective to cause the nucleation sites to diffuse to a localized region near to the back surface. Illustratively the stressed layer comprises silicon nitride or aluminum oxide. Enhanced gettering is achieved if, prior to forming the stressed layer, interfacial misfit dislocations are introduced into the back surface by, for example, diffusion of phosphorus therein. Following the gettering step(s) on the back surface, conventional procedures, such as growing epilayers and/or forming p-n junctions, are performed on the front surface of the wafer.

REFERENCES:
patent: 3418181 (1968-12-01), Robinson
patent: 3494809 (1970-02-01), Ross
patent: 3579815 (1971-05-01), Gentry
patent: 3701696 (1972-10-01), Mets
patent: 3806371 (1974-04-01), Barone
Mets, "Poisoning & Gettering Effects in Si Junctions", J. Electrochem. Soc., vol. 112, pp. 420-425 (1965).
Pomerantz, "A Cause & Cure of Stacking Faults--etc." JAP, vol. 38, pp. 5020-5026 (1967).
Lawrence, "On Lattice Disorders--etc." Semiconductor Silicon, Haberecht, et al. Eds., pp. 569-609 (1969).
Lawrence, "Correlation of Si Material Characteristics--etc." Semiconductor Silicon, Huff, Ed., P. Electrochem Soc., pp. 17-34 (1973).
Seidel, et al., "Ion Implantation Damage Gettering--etc." Ion Implantation in Semiconductors--etc., Crowder, Ed. Plenum, pp. 305-315 (1973).
Rozgonyi, et al. "Elimination of Oxid. Induced Stacking Faults--etc." J. Electrochem. Soc., 84C, Abst. No. 172, Mar. 1975.
Barson, et al. "Gettering Technique", IBM Tech. Dis. Bull., vol. 15, No. 6, Nov. 1972, p. 1752.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Elimination of stacking faults in silicon devices: a gettering p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Elimination of stacking faults in silicon devices: a gettering p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Elimination of stacking faults in silicon devices: a gettering p will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1342968

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.