Elimination of silicon pyramids from epitaxial crystals of GaAs

Details Elimination of silicon pyramids from epitaxial crystals of GaAs Elimination of silicon pyramids from epitaxial crystals of GaAs

1981-10-26

1983-05-24

Ozaki, G.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29576E, 148171, 148172, 156616A, H01L 21208

Patent

active

043843980

ABSTRACT:
The occurrence of pyramidal protrusions on the surface of GaAs and GaAlAs p-n junction wafers produced by a multislice liquid phase epitaxy process is avoided by slow cooling to a specified quenching temperature or below. The pyramidal protrusions are constituted of the silicon which is the amphoteric dopant used in these semiconductors. Pyramids are not formed if the epitaxial reactor is cooled at a rate of 1.degree. Celsius to 3.degree. Celsius per minute to a temperature less than about 140.degree. Celsius before the wafers are moved to the cool portion of the reactor and then further cooled to room temperature.

REFERENCES:
patent: 3578513 (1971-05-01), Pilkuhn et al.
patent: 3676228 (1972-07-01), Sakurai et al.
patent: 3705825 (1972-12-01), Touchy et al.
patent: 3783825 (1974-01-01), Kobayasi et al.
patent: 3854447 (1974-12-01), Kobayasi
patent: 4012242 (1977-03-01), Matare
patent: 4088514 (1978-05-01), Hara et al.
patent: 4287848 (1981-09-01), Leibenzeder et al.

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