Metal working – Plural diverse manufacturing apparatus including means for... – Common reciprocating support for spaced tools
Patent
1983-06-20
1986-01-28
Saba, William G.
Metal working
Plural diverse manufacturing apparatus including means for...
Common reciprocating support for spaced tools
29576E, 29578, 29580, 148171, 148175, 148DIG50, 148DIG72, 148DIG118, 156649, 156652, 156656, 1566591, 357 17, 357 56, 372 46, 427 39, 427 93, 427 95, H01L 2120, H01L 21302
Patent
active
045661715
ABSTRACT:
In the fabrication of buried heterostructure InP/InGaAsP lasers, mask undercutting during the mesa etching step is alleviated by a combination of steps which includes the epitaxial growth of a large bandgap InGaAsP cap layer (1.05 eV.ltorsim.E.sub.g .ltorsim.1.24 eV) and the plasma deposition of a SiO.sub.2 etch masking layer. Alternatively, the cap layer may be a bilayer: an InGaAs layer or narrow bandgap InGaAsP (E.sub.g .ltorsim.1.05 eV), which has low contact resistance, and a thin InP protective layer which reduces undercutting and which is removed after LPE regrowth is complete. In both cases, etching at a low temperature with agitation has been found advantageous.
REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.
patent: 4137107 (1979-01-01), Nijman et al.
patent: 4366569 (1982-12-01), Hirao et al.
patent: 4426700 (1984-01-01), Hirao et al.
patent: 4426702 (1984-01-01), Yamashita et al.
patent: 4481631 (1984-11-01), Henry et al.
patent: 4496403 (1985-01-01), Turley
R. J. Nelson, R. B. Wilson, P. D. Wright, P. A. Barnes and N. K. Dutta, "CW Electrooptical Properties of InGaAsP (.lambda.=1.3 um) Buried-Heterostructure Lasers", IEEE Journal of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, pp. 202-206.
R. J. Nelson and N. K. Dutta, "Self-Sustained Pulsations and Negative-Resistance Behavior in InGaAsP (.lambda.=1.3 um) Double-Heterostructure Lasers", Applied Physics Letters, vol. 37, No. 9, Nov. 1, 1980, pp. 769-771.
M. Hirao, A. Doi, S. Tsuji, M. Nakamura and K. Aiki, "Fabrication and Characterization of Narrow Stripe InGaAsP/InP Buried Heterostructure Lasers", Journal of Applied Physics, vol. 51, No. 8, Aug. 1980, pp. 4539-4540.
R. B. Wilson, R. J. Nelson and P. D. Wright, "Electrical-Optical Characteristics of Buried Waveguide Heterostructure InGaAsP Injection Lasers", International Electron Devices Meeting Technical Digest, Washington, D.C., Dec. 8-10, 1980, pp. 370-373.
G. H. Olsen, F. Z. Hawrylo, D. J. Channin, D. Botez and M. Ettenberg, "1.3 .mu.m LPE- and VPE-Grown InGaAsP Edge-Emitting LED's", IEEE Journal of Quantum Electronics, vol. QE-17, No. 10, Oct. 1981, pp. 2130-2134.
Nelson Ronald J.
Wilson Randall B.
AT&T Bell Laboratories
Saba William G.
Urbano Michael J.
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