Elimination of heterojunction band discontinuities

Details Elimination of heterojunction band discontinuities Elimination of heterojunction band discontinuities

1991-10-11

1992-12-08

Epps, Georgia Y.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, H01S 308

Patent

active

051704072

ABSTRACT:
Conduction band or valence band discontinuities occurring at the junction of two unipolar heterogeneous semiconductors can be eliminated by compositional grading of the heterointerface and appropriate doping of the interfacial region. The compositional potential of graded junction and an interface dipole potential generated by modulation doping of the interfacial region are selected such that they exactly compensate each other. The compositional grading of the interface is achieved by semiparabolic grading of narrow regions immediately adjacent each side of the interface. The modulation doping is achieved by doping the two materials with suitable dopants, donors for the conductance band or acceptors for the valence band, depending on the polarity of the structure. This reduces the resistance in periodic semiconductor multilayer structures leading to low-resistance distributed Bragg reflectors.

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H. Kogelnik et al., "Coupled-Wave Theory of Distributed Feedback Lasers", Journal of Applied Physics, vol. 43, No. 5, May 1972, pp. 2327-2335.
M. Sundaram et al., "Modulation-Doped Graded Structures: Growth and Characterization", Journal of Applied Physics, vol. 69, No. 4, Feb. 15, 1991, pp. 2370-2375.

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