Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1981-06-25
1983-06-28
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
118415, 148172, 156624, H01L 21208
Patent
active
043903797
ABSTRACT:
A method of growing a semiconductor layer by liquid phase epitaxy utilizing a slide type apparatus comprising a substrate carrier having a recess for holding a substrate and a source material carrier slidably arranged over the surface of the substrate carrier and including a well around the recess, comprises the steps of filling said well with material selected from a thermally insulating material and a material which is molten at the temperature of crystal growth and then cycling the temperature of the apparatus in a manner so as to form an epitaxial layer on a substrate in the recess which layer is essentially free of excess edge growth.
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Ozaki G.
Spivak J. F.
Western Electric Company Inc.
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