Elevated temperature measurement of the minority carrier lifetim

Details Elevated temperature measurement of the minority carrier lifetim Elevated temperature measurement of the minority carrier lifetim

1997-07-11

1999-11-02

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324767, G01R 3126

Patent

active

059777885

ABSTRACT:
A method for determining the depletion layer minority carrier lifetime .tau..sub.o in a depletion layer of a semiconductor wafer includes the following. A depletion layer is induced on a surface of the wafer. The wafer is heated to a temperature T.sub.1. A surface photovoltage is induced on the surface of the wafer with modulated light. A surface photovoltage .DELTA.V.sub.o1 is measured at a selected point of the wafer, at T.sub.1 and at a low light modulation frequency where the surface photovoltage is substantially independent of frequency. A surface photovoltage .DELTA.V.sub.1 is measured at the selected point, at T.sub.1 and at a higher light modulation frequency .omega. which is within a frequency range where the surface photovoltage is inversely proportional to frequency. A surface photovoltage response time .tau..sub.max1 is determined by the relationship: .tau..sub.max1 =.omega..sub.1.sup.-1 [(.DELTA.V.sub.o1 /.DELTA.V.sub.1).sup.2 -1].sup.1/2. The wafer is heated to a temperature T.sub.2, greater than the temperature T.sub.1. A surface photovoltage .DELTA.V.sub.o2 is measured at the selected point, at T.sub.2 and at the low light modulation frequency. A surface photovoltage .DELTA.V.sub.2 is measured at the selected point, at T.sub.2 and at a frequency .omega..sub.2 in a range where the photovoltage is inversely proportional to frequency. A surface photovoltage response time .tau..sub.max2 is determined by the relationship .tau..sub.max2 =.omega..sub.2.sup.- 1[(.DELTA.V.sub.o2 /.DELTA.V.sub.2).sup.2 -1].sup.1/2. The room temperature depletion layer lifetime .tau..sub.o is determined by the relationship:

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