Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-10-19
2000-09-05
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257448, 257185, H01L 2714, H01L 3100
Patent
active
061147397
ABSTRACT:
An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. At least one photo sensor is formed adjacent to the interconnect structure. Each photo sensor includes a pixel electrode which includes a patterned doped semiconductor layer. An I-layer is formed adjacent to the patterned doped semiconductor layer. A transparent electrode is formed adjacent to the I-layer. A method of forming the active pixel sensor includes forming an interconnect structure over a substrate. Next, a doped semiconductor layer is deposited over the interconnect structure. The doped semiconductor layer is etched forming pixel electrode. An I-layer is deposited over the pixel electrodes. Finally, a transparent conductive layer is deposited over the I-layer.
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Silicon Vision GmbH--TFA Technology--a-Si:H Photodetectors, pp. 1-6, GIF image 761.times.413 pixels; Thin Film Technology pp. 1-2, GIF image 901.times.457 pixels; Archive-Index, p. 1.
Q. Zhu, T. Lule, H. Stiebig, T. Martin, J. Giehl, J. Zhou, H. Fisher, M. Bohm--Universitat-GH Siegen, Institut fur Halbleiterelektronik (IHE), D-57068, Siegen, Germany; pp. 727-729.
Cao Min
Cham Kit M.
Greene Wayne M.
Lupi Steven A.
Ma Shawming
Agilent Technologies
Meier Stephen D.
Short Brian
LandOfFree
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