Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-10-19
2000-01-25
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257444, 257656, H01L 3100, H01L 31075, H01L 31105, H01L 31117
Patent
active
060181877
ABSTRACT:
An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. Each photo sensor includes an individual pixel electrode. An I-layer is formed over all of the pixel electrodes. A transparent electrode is formed over the I-layer. An inner surface of the transparent electrode is electrically connected to the I-layer and the interconnect structure.
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Q. Zhu, T. Lule, H. Stiebig, T. Martin, J. Giehl, J. Zhou, H. Fisher, M. Bohm--Universitat-GH Siegen, Institut fur Halbleiterelektronik (IHE), D-57068, Siegen, Germany; pp. 727-729.
Silicon Vision GmbH--TFA Technology--a-Si:H Photodetectors, pp. 1-6, GIF image 761.times.413 pixels; Thin Film Technology pp. 1-2, GIF image 901.times.457 pixels; Archive-Index, p. 1.
Cao Min
Ma Shawming
Perner Frederick A.
Ray Gary W.
Sun Xin
Hewlett-Packard Cmpany
Ngo Ngan V.
Short Brian R.
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