Elevated photodiode in an image sensor

Details Elevated photodiode in an image sensor Elevated photodiode in an image sensor

2005-01-25

2005-01-25

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S059000, C257S072000, C257S233000, C257S257000, C257S258000, C257S290000, C257S291000, C257S292000, C438S048000, C438S128000, C438S149000, C438S151000, C438S157000

Reexamination Certificate

active

06847051

ABSTRACT:
The invention provides an elevated photodiode for image sensors and methods of formation of the photodiode. Elevated photodiodes permit a decrease in size requirement for pixel sensor cells while reducing leakage, image lag and barrier problems typically associated with conventional photodiodes.

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