Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-11-18
1999-08-10
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257 88, 257184, 257226, 257233, 257234, 257290, 257291, 257292, 257293, H01L 3120
Patent
active
059362618
ABSTRACT:
An image sensor. The image sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. A plurality of image sensors are formed adjacent to the interconnect structure. Each image sensor includes a pixel electrode, and a separate I-layer section formed adjacent to the pixel electrode. The image sensor array further includes an insulating material between each image sensor. A transparent electrode is formed over the image sensors. An inner surface of the transparent electrode is electrically connected to an outer surface of the image sensors and the interconnect.
REFERENCES:
patent: 5213984 (1993-05-01), Okada et al.
Silicon Vision GmbH13 TFA Technology--a-Si:H Photodetectors, pp. 1-6, GIF image 761.times.413 pixels; Thin Film Technology pp. 1-2, GIF image 901.times.457 pixels; Archive-Index, p. 1.
Q. Zhu, T. Lule, H. Stiebig, T. Martin, J. Giehl, J. Zhou, H. Fisher, M. Bohm--Universtat-GH Siegen, Institut fur Halbleiterelektronik (IHE), D-57068, Siegen, Germany; pp. 727-729.
Ma Shawming
Theil Jeremy A.
Abraham Fetsum
Hewlett--Packard Company
Short Brian R.
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