Elevated image sensor array which includes isolation between the

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 72, 257 88, 257184, 257226, 257233, 257234, 257290, 257291, 257292, 257293, H01L 3120

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059362618

ABSTRACT:
An image sensor. The image sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. A plurality of image sensors are formed adjacent to the interconnect structure. Each image sensor includes a pixel electrode, and a separate I-layer section formed adjacent to the pixel electrode. The image sensor array further includes an insulating material between each image sensor. A transparent electrode is formed over the image sensors. An inner surface of the transparent electrode is electrically connected to an outer surface of the image sensors and the interconnect.

REFERENCES:
patent: 5213984 (1993-05-01), Okada et al.
Silicon Vision GmbH13 TFA Technology--a-Si:H Photodetectors, pp. 1-6, GIF image 761.times.413 pixels; Thin Film Technology pp. 1-2, GIF image 901.times.457 pixels; Archive-Index, p. 1.
Q. Zhu, T. Lule, H. Stiebig, T. Martin, J. Giehl, J. Zhou, H. Fisher, M. Bohm--Universtat-GH Siegen, Institut fur Halbleiterelektronik (IHE), D-57068, Siegen, Germany; pp. 727-729.

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