Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-04-20
1996-04-16
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257283, 257286, 257472, H01L 2980, H01L 2702
Patent
active
055085393
ABSTRACT:
A field effect transistor (10) has an active layer (16) formed in a substrate (12). A gate (20) is disposed on an elevated platform (18) formed from the active layer (16). The elevated platform (18) raises the bottom surface (21) of the gate (20) relative to the top surface (34, 36) of the active region (13) on either side of the gate (20). A fabrication method for the transistor (10) forms the elevated platform (18) by etching the active region surface (44) on both sides of the gate (20) so that the bottom surface (21) of the gate (20) is elevated relative to the top surface (34) of the surrounding active region (13). The gate (20) itself and/or a patterned photoresist layer (116) may be used as a mask for performing this etch.
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Gilbert James G.
Golio John M.
Halchin David J.
Klingbeil, Jr. Lawrence S.
Monin, Jr. Donald L.
Motorola Inc.
Neel Bruce T.
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