Elementary logic circuit obtained by means of field effect trans

Details Elementary logic circuit obtained by means of field effect trans Elementary logic circuit obtained by means of field effect trans

1985-02-07

1987-04-28

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 307443, 307359, 307571, H03K 19003, H03K 1901, H03K 19094, H03K 3356

Patent

active

046617256

ABSTRACT:
An elementary logic circuit obtained by means of Schottky barrier field effect transistors of gallium arsenide includes a differential amplifier, whose first branch, controlled by the input signal E, supplies an output signal S.sub.1, and whose second branch, controlled by a reference signal, supplies an output signal S.sub.2. This circuit further includes two paired level translator stages, the first of which supplies output signal S and the second of which supplies a complementary signal S, the output signal S constituting the reference signal which controls the second branch of the differential amplifier. The circuit can advantageously be used in high-speed IC modules having a lower power consumption, consisting of gallium arsenide and compatible with the circuits realized according to the ECL 100 K technology on silicon.

REFERENCES:
patent: 4185211 (1980-01-01), Kucharewski
patent: 4438351 (1984-03-01), Schuermeyer
patent: 4488064 (1984-12-01), Vance
patent: 4518871 (1985-05-01), Toyoda et al.
Katsu et al., "A GaAs Monolithic Frequency Divider Using Source Coupled FET Logic", IEEE Electron Device Letters, vol. EDL-3, No. 8, pp. 197-199, Aug. 1982.
Evans, "Designing With Field-Effect Transistors", Siliconix Inc., McGraw-Hill Book Co., pp. 245-248, 1981.
Van Tuyl et al., "High Speed Integrated Logic with GaAs MESFETS", IEEE Journal of Solid State Circuits, vol. SC-9, No. 5, pp. 269-276, Oct. 1974.
Lehovec et al., "Analysis of GaAs FET's for Integrated Logic", IEEE Transactions on Electron Devices, vol. ED-27, No. 6, pp. 1074-1091, Jun. 1980.

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