Element storage layer in integrated circuits

Details Element storage layer in integrated circuits Element storage layer in integrated circuits

2005-05-10

2005-05-10

Dinkins, Anthony (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S303000, C257S303000, C257S306000

Reexamination Certificate

active

06891713

ABSTRACT:
Reduced degradation to capacitor properties is disclosed. A hydrogen storage layer is provided over at least a portion a top capacitor electrode. The hydrogen storage layer absorbs and stores hydrogen, preventing hydrogen from diffusing to the capacitor. The hydrogen storage layer has, for example, lanthium nitride, titanium zirconium nitride, amorphous sm—co, nanostructured carbon, or a combination thereof.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5563762 (1996-10-01), Leung et al.

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