Element joining pad for semiconductor device mounting board

Details Element joining pad for semiconductor device mounting board Element joining pad for semiconductor device mounting board

1994-12-16

1996-01-16

Thomas, Laura

Electricity: electrical systems and devices

Housing or mounting assemblies with diverse electrical...

For electronic systems and devices

174257, 174260, 361767, H05K 109

Patent

active

054853524

ABSTRACT:
An element joining pad for a semiconductor device mounting board includes a thick-film metalized layer, a barrier layer, and a Ni plating layer. The thick-film metalized layer is selectively formed on a low-temperature sintered board and consists of one of a metal and an alloy which can be sintered at 500.degree. C. or more and 1,200.degree. C. or less. The barrier layer is formed on the thick-film metalized layer and constituted by one of a Rh plating layer and a Ru plating layer. The Ni plating layer is formed on the barrier layer.

REFERENCES:
patent: 4081601 (1978-03-01), Dinella et al.
patent: 4549043 (1985-10-01), Kalubowila et al.
patent: 4959510 (1990-09-01), Matsusaka et al.
patent: 5384204 (1995-01-01), Yumoto et al.
patent: 5400221 (1995-03-01), Kawaguchi

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