Element-isolated hydrogen-terminated diamond semiconductor devic

Details Element-isolated hydrogen-terminated diamond semiconductor devic Element-isolated hydrogen-terminated diamond semiconductor devic

1995-09-13

1998-07-28

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257280, 257499, 257613, H01L 310312, H01L 2900, H01L 2912

Patent

active

057866040

ABSTRACT:
A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film 1 having a hydrogen-terminated surface; then making a drain ohmic contact 3, a source ohmic contact 4, both of gold, and a gate electrode 5 of aluminum on the film 1; and changing a site of the hydrogen-terminated surface other than the site for the MESFET to be terminated with atoms other than hydrogen atoms.

REFERENCES:
patent: 5278430 (1994-01-01), Kakumu
patent: 5523588 (1996-06-01), Nishimura et al.
K. Kobashi et al.; Proc. 2.sup.nd Int. Conf., Appl. of Diamond Films and Related Materials, ed. (Saitama 1992) pp. 35-42.
Diamond Thin-Film Recessed Gate Field-Effect Transistors Fabricated by Electron Cyclotron Resonance Plasma Etching: S.A. Grot, G.S. Gildenblat, and A.R. Badzian, IEEE Electron Device Lett. vol. 13, No. 9, Sep. 1992, pp. 462-463.
Aoki, Ito, Kawarada, et al.: Brief of 40.sup.th Joint Meeting Related to Applied Physics, p. 30, MK11, 12.

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