Element concentration measuring method and apparatus, and semico

Details Element concentration measuring method and apparatus, and semico Element concentration measuring method and apparatus, and semico

1998-02-04

2000-03-21

Niebling, John F.

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

378 45, 378 83, G01R 3126

Patent

active

060401982

ABSTRACT:
X-rays are irradiated to a sample to be measured including at least one layer of film formed on a substrate; an interference oscillation curve of the X-rays incident on the sample to be measured is measured; and a concentration of an element adhered on a surface of the sample to be measured and/or segregated in an interface of the film is measured. The interference oscillation curve is fitted to an analysis formula expressing an X-ray reflectance to thereby determining a density of a region of the sample to be measured, where the element is adhered or is segregated, and a concentration of the element is computed based on the density.

REFERENCES:
patent: 4959848 (1990-09-01), Parobek
patent: 5003569 (1991-03-01), Okada et al.
patent: 5148457 (1992-09-01), Kubota et al.
patent: 5430786 (1995-07-01), Komatsu et al.
patent: 5619548 (1997-04-01), Koppel
patent: 5742658 (1998-04-01), Tiffin et al.
U.S. application No. 08/757,622, Komiya et al., filed Nov. 27, 1996.

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