Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1993-09-20
1994-08-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257659, 3151691, 315349, 313309, 313336, 313351, H01J 102
Patent
active
053409973
ABSTRACT:
A field emission microelectronic device based on field emitter structures and fabrication processes. In one embodiment, the microelectronic device includes an electron source, a collector adjacent to the source, and an isolator. The source and the collector are both coupled to a substrate. At appropriate voltages on the source and the collector, electrons are emitted from the emitter out of the substrate into the collector per unit time, creating a current. The isolator is at an isolator voltage to create an electrostatic enclosure to substantially confine the electrons in the vicinity of the electron source and the collector. The microelectronic device is substantially electrostatically shielded and may be used as a current controller in a flat panel displays.
REFERENCES:
patent: 4683399 (1987-07-01), Soclof
patent: 4908539 (1990-03-01), Meyer
patent: 4987377 (1991-01-01), Gray et al.
patent: 5012153 (1991-04-01), Atkinson et al.
patent: 5075595 (1991-12-01), Kane
patent: 5138237 (1992-08-01), Kane et al.
patent: 5140219 (1992-08-01), Kane
patent: 5173534 (1992-12-01), Kane
patent: 5189341 (1993-02-01), Itoh et al.
patent: 5191217 (1993-03-01), Kane et al.
patent: 5196767 (1993-03-01), Leard et al.
patent: 5210472 (1993-05-01), Casper et al.
patent: 5212426 (1993-05-01), Kane
patent: 5245247 (1993-09-01), Hosogi
Jones et al., "Fabrication of Silicon Point, Wedge, and Trench FEAs", Technical Digest of Int. Vacuum Microelectronics Conf., 1991, pp. 34-35.
Spindt et al., "Physical Properties of Thin-Film Field Emission Cathodes with Molybdenum Cones", Journal of Applied Physics, vol. 47, No. 12, Dec. 1976, pp. 5248-5263.
Pan et al., "Numerical Analysis of Spindt Type Cathode and Two Kinds of Vacuum Microelectronic Devices", Techical Digest of IVMC, 1991.
Gray et al., "A Silicon Field Emitter Array Planar Vacuum Fet Fabricated with Micro Fabrication Techniques", Materials Research Society Symposium Proc., vol. 76, pp. 25-31, 1987.
Hewlett--Packard Company
Hille Rolf
Tong Peter P.
Tran Minhloan
LandOfFree
Electrostatically shielded field emission microelectronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrostatically shielded field emission microelectronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatically shielded field emission microelectronic device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-504567