Electrostatically regulated atomic scale electroconductivity...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C324S691000

Reexamination Certificate

active

08076668

ABSTRACT:
An atomic scale electroconductivity device with electrostatic regulation is provided that includes a perturbing species having a localized electronic charge ol a dangling bond. A sensing species having an electronic conductivity is placed in proximity to the perturbing species at a distance sufficient to induce a change in the electronic conductivity associated with the localized electronic charge. Electronics are provided to measure the conductivity via the sensing species. The dangling bond functions as a single atom gate electrode.

REFERENCES:
patent: 6893884 (2005-05-01), Shi et al.
patent: 2002/0179915 (2002-12-01), Sakurai et al.
Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces, Guisinger et al., Nano Letters, 2004, vol. 4, No. 1, pp. 55-59.
Hersam et al., Silicon-based molecular Nanotechnology, 2000, Nanotechnology, vol. 11, pp. 70-76.
Wolkow, Robert A., “Controlled Molecular Adsorption on Silicon: Laying a Foundation for Molecular Devices”, Annu. Rev. Phys. Chem. 50 413-41.
Simmons, Michelle Y., “Towards the atomic-scale fabrication of a silicon-based solid state quantum computer”, Surface Science 532-535 (2003) 1209-1218.
Selzer, Yoram, “Effect of Local Environment on Molecular Conduction: Isolated Molecule versus Self-Assembled Monolayer”, Nano Letter, 2005, vol. 5, No. 1, pp. 61-65.
Reed, M. A. “Conductance of a Molecular Junction”, Science, vol. 278, Oct. 10, 1997.
Park, Jlwoong et al. “Coulomb blockage and the Kondo effect in single-atom transistors”, Nature, vol. 417, Jun. 13, 2002.
Lopinski, G.P., “Self-directed growth of molecular nanostructures on silicon”, Nature, vol. 406, Jul. 6, 2000.
Landman, Uzi, “Small Is different: energentic, structural, thermal, and mechanical properties of passivity nanocluster assemblies”, Faraday Discuss, 2004, 125, 1-22.
Feenstra, R.M., “Electrostatic potential for a hyperbolic probe tip near a semiconductor”, J. Vac. Sci. Technol. B 21(5), Sep./Oct. 2003, pp. 2080-2088.
Damle, Prashant, et al., Current-Voltage Characteristics of Molecular Conductors: Two Versus Three Terminal, IEEE Transactions on Nanotechnology, vol. 1, No. 3, Sep. 2002, pp. 145-153.
Damle, Prashant, et al., “Current-Voltage Characterists of Molecular Condutors: Two Versus Three Terminal”, IEEE Transactions on Nanotechnology, vol. 1, No. 3, Sep. 2002.
Cui, Yi, et al., “High Performance Silicon Nanowire Field Effect Transistors”, Nano Letters, 2003, vol. 3, No. 2, pp. 149-152.
Cui, X.D. et al., “Reproducible Measurement of Single-Molecule Conductivity”, Science 294, 571 (2001): DOI: 10. 1126/science. 1064354.
Chen, J., et al., “Room-temperature negative differential resistance in nanoscale molecular junctions”, Applied Physics Letters, vol. 77, No. 8, Aug. 21, 2000.
Aswal, U.K., “Self assembled monolayers on silicon for molecular electronics”, Science Direct, Analytics Chimica Acta 568 (2006) 84-108.
Aviram, Arieh, “Molecular Rectifiers”, Chemical Physics Letters, vol. 29, No. 2, Nov. 15, 1974, pp. 277-283.
Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature, M. B. Haider, J.L. Pitters, G.A. DiLabio, L. Livadaru, J.Y. Mutus, R.A. Wolkow, Phys. Rev. Lett. 102, 046805 (2009).
“Detailed Studies of Molecular Conductance Using Atomic Resolution Scanning Tunneling Microscopy”, J.L. Pitters, R.A. Wolkow, Nano Lett. 6, 390 (2006).
“Conformational Switching of Single 1,5-Cyclooctadiene Molecules on Si(001) Induced by Inelastic Electron Tunneling”, C. Nacci, J. Lagoute, X. Liu, S. F{hacek over (o)}lsch, Phys. Rev. B 77, 121405(R) (2008).
“Vibrationally Mediated Negative Differential Resistance in a Single Molecule” J. Gaudioso, L. J. Lauhon, W. Ho, Phys. Rev. Lett. 85, 1918 (2000).
“Silicon-based Molecular Electronics”, T. Rakshit, G.-C. Liang, A.W. Ghosh, S. Datta, Nano Lett. 4, 1803 (2004).
“Negative Differential Resistance in Transport through Organic Molecules on Silicon”, S.Y. Quek, J. B. Neaton, M.S. Hybertsen, E. Kaxiras, S.G. Louie, Phys. Rev. Lett. 98, 066807 (2007).
“First-Principles Nonequilibrium Analysis of STM-Induced Molecular Negative-Differential Resistance on Si(100)”, K. H. Bevan, D. Kienle, H. Guo, S. Datta, Phys. Rev. B 78, 035303 (2008).
“Transport om single-molecule transistors: Kondo physics and negative differential resistance”, L. H. Yu and D. Natelson. Nanotechnology 15, S517-S524 (2004).

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