Electrostatically bonded dielectric-on-semiconductor device, and

Details Electrostatically bonded dielectric-on-semiconductor device, and Electrostatically bonded dielectric-on-semiconductor device, and

1975-09-04

1977-09-06

Wojciechowicz, Edward J.

357 4, 357 26, 357 68, H01L 2978, H01L 2712, H01L 2984, H01L 2348

Patent

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040472140

ABSTRACT:
An electrostatically bonded dielectric-on semiconductor device, such as a ferroelectric field-effect transistor or amplifying acoustic surface wave transducer, is made with a dielectric body having properties selected from the group consisting of ferroelectricity and piezoelectricity. The dielectric body has opposed first and second major surfaces, with at least said first major surface of planar configuration to which a semiconductor body is electrostatically bonded. The semiconductor body is of a bulk material and a given conductivity type, and has first and second opposed major surfaces, with at least the first major surface of planar configuration where the semiconductor body is electrostatically bonded. At least one and typically a plurality of electrodes are positioned on the dielectric body to provide for interaction between transport carriers in the semiconductor body and electric polarization changes in the dielectric body. Preferably, the dielectric-on-semiconductor is made by the method described.

REFERENCES:
patent: 3479572 (1969-11-01), Pokorny
patent: 3585415 (1971-06-01), Muller et al.
patent: 3686579 (1972-08-01), Everett
patent: 3851280 (1974-11-01), Staples
patent: 3868719 (1975-02-01), Kurtz et al.
IEEE Transactions on Electron Devices, vol. ED-14, No. 12, Dec. 1967 - Perlman et al.

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