Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2007-11-20
2007-11-20
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C200S181000, C257SE23001
Reexamination Certificate
active
10529241
ABSTRACT:
The field of the invention is that of microsystems of the electrostatically actuated microswitch type that are used in electronics to carry out switching functions, especially in the microwave field for mobile telephony and radars. The object of the invention is to improve the performance of the switch by reducing the response time of the device and by increasing the radiofrequency or microwave power supported, while still maintaining low switching voltages. This improved performance is obtained by using thick membranes and by placing a material of high relative permittivity between said membrane and the associated electrode. The switch is obtained by a novel production process, the membrane being produced on an independent substrate and then joined to the base substrate of the switch. Examples of processes for producing devices according to the invention with the materials that can be used, the possible geometries and the various production steps are given.
REFERENCES:
patent: 5619061 (1997-04-01), Goldsmith et al.
patent: 5904996 (1999-05-01), Van Der Zaag et al.
patent: 6143583 (2000-11-01), Hays
patent: 6297072 (2001-10-01), Tilmans et al.
patent: 6456190 (2002-09-01), Andersson et al.
patent: 6486425 (2002-11-01), Seki
patent: 6686292 (2004-02-01), Yang et al.
patent: 0 520 407 (1992-12-01), None
Liu Y et al: “High-Isolation Bst-Mems Switches” 2002 IEEE Mtt-S International Microwave Syposium Digest (IMS 2002). Seattle, WA, Jun. 2-7, 2002, IEEE MTT-S International Microwave Symposium, New York, NY vol. 1 of 3 Jun. 2, 2002, pp. 227-230.
Database WPI Section Ch, Week 200209 Derwent Publications Ltd., London, GB; Class LO3, AN 2002-065081 May 15, 2001.
Dean Thierry
Polizzi Jean-Philippe
Ziaei Afshin
Geyer Scott B.
Lowe Hauptman & Ham & Berner, LLP
Patel Reema
Thales
LandOfFree
Electrostatically actuated low response time power... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrostatically actuated low response time power..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatically actuated low response time power... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3843861