Electrostatic protective device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

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257713, 257730, 257774, 257759, 257717, H01L 2900, H01L 2334, H01L 2348

Patent

active

057147949

ABSTRACT:
Provided is an electrostatic protective device which is highly effective in protecting relatively vulnerable devices such as IC's and LSI's from electrostatic damages, and a method for fabricating an electrostatic protective device which can simplify the structure as compared with the conventional devices sealed in a glass container, and can reduce the size and cost of the device. The chip type electrostatic protective device comprises an inner insulating layer made of organic resin material and provided with a plurality of holes for defining air gaps, a pair of outer insulating layers placed on both sides of the inner insulating layer, and circuit segments defining a discharge gap in each of the air gaps. Holes for interconnection are formed in the laminated assembly, and the interior of each of the holes is turned electroconductive. The assembly is then cut apart into individual chip type electrostatic protective device by cutting through each of the holes for interconnection so as to define terminals for interconnection.

REFERENCES:
patent: 3436601 (1969-04-01), Dyre
patent: 3946428 (1976-03-01), Anazawa et al.
patent: 4181913 (1980-01-01), Thornburg
patent: 4446168 (1984-05-01), Kato
patent: 5027136 (1991-06-01), O'Connell et al.
W. den Boer, "Threshold switching in Hydrogenated Amorphous Silicon", Appl. Phys. Letter 40(9):812-813 (May 1, 1982).

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