Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-04-15
1998-02-03
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257713, 257730, 257774, 257759, 257717, H01L 2900, H01L 2334, H01L 2348
Patent
active
057147949
ABSTRACT:
Provided is an electrostatic protective device which is highly effective in protecting relatively vulnerable devices such as IC's and LSI's from electrostatic damages, and a method for fabricating an electrostatic protective device which can simplify the structure as compared with the conventional devices sealed in a glass container, and can reduce the size and cost of the device. The chip type electrostatic protective device comprises an inner insulating layer made of organic resin material and provided with a plurality of holes for defining air gaps, a pair of outer insulating layers placed on both sides of the inner insulating layer, and circuit segments defining a discharge gap in each of the air gaps. Holes for interconnection are formed in the laminated assembly, and the interior of each of the holes is turned electroconductive. The assembly is then cut apart into individual chip type electrostatic protective device by cutting through each of the holes for interconnection so as to define terminals for interconnection.
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W. den Boer, "Threshold switching in Hydrogenated Amorphous Silicon", Appl. Phys. Letter 40(9):812-813 (May 1, 1982).
Isono Tadashi
Nishimura Atsushi
Suzunaga Atsushi
Tsuyama Kouichi
Abraham Fetsum
Hitachi Chemical Company Ltd.
Thomas Tom
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