Electrostatic protection element

Details Electrostatic protection element Electrostatic protection element

2009-08-18

2010-10-26

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000, C257SE29211

Reexamination Certificate

active

07821029

ABSTRACT:
An electrostatic protection element relating to the present invention comprises a P-type semiconductor and an N-type first impurity layer provided in the semiconductor substrate. The first impurity layer comprises a P-type second impurity layer functioning as a gate. The second impurity layer comprises an N-type third impurity layer functioning as a cathode. Further, the first impurity layer comprises an N-type fourth impurity layer spaced apart from the second impurity layer at a distance. The fourth impurity layer comprises a P-type fifth impurity layer functioning as an anode and an N-type sixth impurity layer. Then, in the electrostatic protection element, an impurity concentration of the fourth impurity layer is higher than that of the first impurity layer, and a bottom of the fourth impurity layer is deeper than that of the second impurity layer.

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patent: 09-191082 (1997-07-01), None
patent: 2006-128293 (2006-05-01), None

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