Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2005-04-21
2008-11-25
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257SE29217
Reexamination Certificate
active
07456440
ABSTRACT:
The electrostatic protection device comprises a semiconductor substrate of a first conductivity type, a well of a second conductivity type formed on the semiconductor substrate, a first diffusion layer of the first conductivity type formed on the second conductivity type well and connected to a signal terminal, a first well of the first conductivity type formed on the semiconductor substrate, a first diffusion layer of the second conductivity type formed on the first well and connected to a ground terminal, a second well of the first conductivity type formed on the semiconductor substrate and spaced apart from the first well and a second diffusion layer of the first conductivity type formed on the second well connected to a ground terminal.
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Japanese Office Action dated Mar. 25, 2008, with English translation.
Japanese Office Action dated Jun. 17, 2008, with partial English translation.
McGinn IP Law Group PLLC
NEC Electronics Corporation
Quinto Kevin
Sefer A.
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