Electrostatic protection device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

Reexamination Certificate

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Details

C257SE29217

Reexamination Certificate

active

07456440

ABSTRACT:
The electrostatic protection device comprises a semiconductor substrate of a first conductivity type, a well of a second conductivity type formed on the semiconductor substrate, a first diffusion layer of the first conductivity type formed on the second conductivity type well and connected to a signal terminal, a first well of the first conductivity type formed on the semiconductor substrate, a first diffusion layer of the second conductivity type formed on the first well and connected to a ground terminal, a second well of the first conductivity type formed on the semiconductor substrate and spaced apart from the first well and a second diffusion layer of the first conductivity type formed on the second well connected to a ground terminal.

REFERENCES:
patent: 4454648 (1984-06-01), Hsia
patent: 6281554 (2001-08-01), Pan
patent: 6713818 (2004-03-01), Kodama
patent: 6806160 (2004-10-01), Ker et al.
patent: 2002/0079538 (2002-06-01), Su et al.
patent: 9-191082 (1997-07-01), None
patent: 11-274404 (1999-10-01), None
patent: 2000-188389 (2000-07-01), None
patent: 2001-144191 (2001-05-01), None
Japanese Office Action dated Mar. 25, 2008, with English translation.
Japanese Office Action dated Jun. 17, 2008, with partial English translation.

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