Electrostatic protection circuit of a semiconductor device

Details Electrostatic protection circuit of a semiconductor device Electrostatic protection circuit of a semiconductor device

1998-08-03

2000-08-08

Gaffin, Jeffrey

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 56, H02H 904

Patent

active

061010774

ABSTRACT:
An electrostatic protection circuit of a semiconductor device comprises a first MOS transistor of specific conductive type and a second MOS transistor of the specific conductive type. In the first MOS transistor, a drain thereof is connected to an output terminal or an input terminal and a source thereof is connected to a first power terminal and the first MOS transistor is controlled to be on/off by a signal received by a gate or ordinarily turned off by holding the gate at a specific potential. In the second MOS transistor of the specific conductive type, a drain thereof is connected to the output terminal or the input terminal and a source thereof is connected to a gate of the first MOS transistor and the second MOS transistor is ordinarily turned off by connecting a gate thereof to the first power terminal.

REFERENCES:
patent: 5345357 (1994-09-01), Pianka
patent: 5745323 (1998-04-01), English et al.
patent: 5917689 (1999-06-01), English et al.

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