Electrostatic protection circuit in a semiconductor device

Details Electrostatic protection circuit in a semiconductor device Electrostatic protection circuit in a semiconductor device

1998-06-26

2000-02-29

Jackson, Stephen W

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 56, 361 58, 361118, 361119, H02H 900

Patent

active

060317043

ABSTRACT:
A power line and a ground line of a bipolar transistor for the electrostatic protection are isolated from a power line and a ground line of an active transistor for data input and output. Also, a resistor is coupled between a power line and a ground line of an active transistor for data input and output, and another resistor is coupled between a pad and the active transistor. Accordingly, the active transistor for data input and output is operated as an internal circuit in the electrostatic protection test since main current flows toward the bipolar transistor. An electrostatic protection circuit according to the present invention uses a bipolar transistor for the electrostatic protection and uses an active transistor for data input and output as an internal circuit in order to increase transistor size. Accordingly, a rated current of a data input and output pad is satisfied as well as the data pin capacitance is reduced since the distance between a gate and a contact in an active transistor is decreased.

REFERENCES:
patent: 4990802 (1991-02-01), Smooha
patent: 5059831 (1991-10-01), Itoh
patent: 5347185 (1994-09-01), Tailliet
patent: 5654860 (1997-08-01), Casper et al.
patent: 5689132 (1997-11-01), Ichikawa

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