Electrostatic protection circuit

Details Electrostatic protection circuit Electrostatic protection circuit

2008-04-09

2011-12-06

Barnie, Rexford (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

Reexamination Certificate

active

08072720

ABSTRACT:
An electrostatic protection circuit that affords protection without effecting transfer of an ordinary output signal includes an output terminal; a ground terminal; a first N-channel transistor having its drain and source connected between the output terminal and the ground terminal GND; a first electrostatic protection element connecting the output terminal and the ground terminal; and a second electrostatic protection element connected the drain and gate of the first N-channel transistor. The second N-channel transistor is connected to the gate of the first N-channel transistor. The gate potential of the first N-channel transistor rises and the gate-to-drain voltage of the first N-channel transistor is limited to a value below a prescribed value by a current that flows into the second electrostatic protection element owing to application of static electricity to the output terminal, and resistance of the second N-channel transistor, which is the ON state, as seen from the gate of the first N-channel transistor.

REFERENCES:
patent: 5610425 (1997-03-01), Quigley et al.
patent: 5901022 (1999-05-01), Ker
patent: 6617649 (2003-09-01), Chang et al.
patent: 2004/0141270 (2004-07-01), Kaneki
patent: 2005/0231866 (2005-10-01), Mergens et al.
Ajith Amerasekera, “ESD in Silicon Integrated Circuits”, Second Edition, Wiley, 2002, p. 117-118.
Momodomi, et al., “A Circular Output Protection Device Using Bipolar Action”, IEEE Reliability Physics Symposium 1987, p. 169-173.

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