Electrostatic protection circuit

Details Electrostatic protection circuit Electrostatic protection circuit

2008-05-05

2010-12-28

Nguyen, Danny (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

C361S111000

Reexamination Certificate

active

07859808

ABSTRACT:
An electrostatic protection circuit, includes a first terminal, a second terminal, a MOS transistor including a gate, a source, and a drain, the gate being coupled to the first terminal, the source being coupled to the second terminal, and an electrostatic protection element connected to the drain, wherein the electrostatic protection element includes a first electrostatic protection element, and a second electrostatic protection element connected between the first terminal and the second terminal. The electrostatic protection circuit is constructed such that a maximum value of a voltage applied to a gate insulating film of the MOS transistor is alleviated to a value equal to or smaller than a desirable value by a current flowing into the first electrostatic protection element at a time of electrostatic application to the first terminal and an internal parasitic resistance of the MOS transistor connected with the second terminal.

REFERENCES:
patent: 6385028 (2002-05-01), Kouno
patent: 6437407 (2002-08-01), Ker et al.
patent: 2005/0231866 (2005-10-01), Mergens et al.
Ajith Amerasekera, “ESD in Silicon Integrated Circuits”, Second Edition, Wiley, 2002, pp. 117-118.

Affiliated with

Also associated with

Rating

Electrostatic protection circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrostatic protection circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic protection circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4217492