Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2007-11-06
2007-11-06
Owens, Douglas W. (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257S328000
Reexamination Certificate
active
10904475
ABSTRACT:
An electrostatic discharge (ESD) protection circuit coupled to an input pad comprises a diode formed in a substrate and coupled to the input pad; a P deep well formed in the substrate; an N well formed in the P deep well; a first P+ doped region in the N well; and an NMOS transistor formed on the substrate, comprising a gate, a source and a drain, wherein the drain is formed in the N well and coupled to a Vcc, and the source is formed in the P deep well; and a second P+ doped region formed in the P deep well. The ESD protection circuit uses a smaller area than the conventional ESD protection circuit.
REFERENCES:
patent: 6268639 (2001-07-01), Li et al.
patent: 7034363 (2006-04-01), Chen
patent: 2005/0173727 (2005-08-01), Manna et al.
Lai Chun-Hsiang
Lu Chia-Ling
Lu Tao-Cheng
Su Shin
Yeh Yen-Hung
Jianq Chyun IP Office
Macronix International Co. Ltd.
Owens Douglas W.
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