Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-09-26
2006-09-26
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML
Reexamination Certificate
active
07112809
ABSTRACT:
A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends across a width of the ion beam for deflecting ions entering the lens structure. The lens structure includes a first electrode for decelerating ions and a second electrode for accelerating the ions. A lens structure mode controller selectively activates either the accelerating or decelerating electrode to to cause ions entering the lens structure to exit said lens structure with a desired trajectory regardless of the trajectory ions enter the lens structure.
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N. Nagai, T. Kawai, M. Nogami, T. Shin'yama, T. Yuasa, Y. Kibi, H. Kawakami, K. Nishikawa and M. IsobeThe Nissin NY-20SP Medium-Current Ion Implanter. Nuclear Instruments and Methods in Physics Research B55 (1991) 393-397 North Holland.
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Benveniste Victor M.
Rathmell Robert D.
Axcelis Technologies Inc.
Nguyen Kiet T.
Watts Hoffmann CO, LPA
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