Electrostatic force assisted deposition of graphene

Coating processes – Direct application of electrical – magnetic – wave – or... – Electrostatic charge – field – or force utilized

Reexamination Certificate

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C427S469000, C427S472000, C427S473000

Reexamination Certificate

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08057863

ABSTRACT:
An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

REFERENCES:
patent: 7449133 (2008-11-01), Gruner et al.
patent: 2008/0023067 (2008-01-01), Hu et al.
patent: 2009/0200707 (2009-08-01), Kivioja et al.
patent: 102007016995 (2008-10-01), None
Novoselov et al., “Electric Field Effect in Atomically Thin Carbon Films”, Science, 2004, vol. 306, p. 666.
Avouris et al., “Carbon-based electronics”, Nature Nanotechnology, 2007, vol. 2, p. 605.
Geim et al., “The rise of graphene”, Nature Materials, 2007, vol. 6, p. 183.
Lemme et al., “A Graphene Field-Effect Device”, IEEE Electron Device Letters, 2007, vol. 28, p. 282.
Gu et al., “Field effect in epitaxial graphene on a silicon carbide substrate”, Applied Physics Letters, 2007, vol. 90, p. 253507.
Liang et al., “Graphene Transistors Fabricated via Transfer-Printing in Device Active-Areas on Large Wafer”, Nano Letters, 2007, vol. 7, No. 12, p. 3840.
Li et al., “Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors”, Science, vol. 319, Feb. 2008, p. 1229.
Wang et al., “Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors”, Physical Review Leters, vol. 100, p. 206803 (2008).
Meric et al., “Current Saturation in zero-bandgap, topgated graphene field-effect transistors”, Nature Nanotechnology, vol. 3, Nov. 2008, p. 654.
Berger et al., “Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics”, J. Phys. Chem. B, 2004, vol. 108, p. 19912.
Berger et al., “Electronic Confinement and Coherence in Patterned Epitaxial Graphene”, Science, vol. 312, May 2006, p. 1191.
Zhou et al., “Substrate-induced bandgap opening in epitaxial graphene”, Nature Materials, vol. 6, Oct. 2007, p. 770.
Coraux et al., “Structural Coherency of Graphene on Ir(111)”, Nano Letters, 2008, vol. 8, No. 2, p. 565.
Chen et al., “Printed Graphene Circuits”, Adv. Mater., 2007, vol. 19, p. 3623.
Eda et al., “Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material”, Nature Nanotechnology, vol. 3, May 2008, p. 270.
Stankovich et al., “Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide”, Carbon, vol. 45, p. 1558 (2007).
Ouyang et al., “Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors”, Applied Physics Letters, vol. 89, p. 203107 (2006).
Ouyang et al., “Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study”, IEEE Transactions On Electron Devices, vol. 54, No. 9, Sep. 2007, p. 2223.
Tapaszto et al., “Tailoring the atomic structure of graphene nanoribbons by scanning tunnelling microscope lithography”, Nature Nanotechnology, vol. 3, Jul. 2008, p. 397.
Kuzumaki et al., “Selective processing of individual carbon nanotubes using dual-nanomanipulator installed in transmission electron microscope”, Appl. Phys. Lett., vol. 79, No. 27, Dec. 31, 2001, p. 4580.
Palser, “Interlayer interactions in graphite and carbon nanotubes”, Phys. Chem. Chem. Phys., 1999, vol. 1, p. 4459.
Rozploch et al., “Graphenes Bonding Forces in Graphite”, Acta Physica Polonica A, vol. 112, No. 3, p. 557 (2007).
Nakahara et al., “Structural changes of a pyrolytic graphite surface oxidized by electrochemical and plasma treatment”, Journal of Materials Science, vol. 29, p. 3193 (1994).
Lu et al., “Patterning of highly oriented pyrolytic graphite by oxygen plasma etching”, vol. 75, No. 2, Jul. 12, 1999, p. 193.
Nemes-Incze et al., “Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy”, Carbon, vol. 46, p. 1435 (2008).
Dayen et al., “Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons”, Small, 2008, vol. 4, No. 6, p. 716.

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