Electrostatic discharge protective circuit and semiconductor...

Details Electrostatic discharge protective circuit and semiconductor... Electrostatic discharge protective circuit and semiconductor...

2007-07-11

2008-11-25

Sherry, Michael J (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

Reexamination Certificate

active

07457087

ABSTRACT:
An electrostatic discharge protective circuit including an ESD protective circuit which has a trigger terminal and forms a discharge path from a first node to a second node when trigger signals are supplied to the trigger terminal, a trigger circuit included in a circuit to be protected which is connected between the first and second nodes, the trigger circuit having a first MOS device, and which functions as a part of the circuit to be protected at the time of normal operation when ESD voltage is not applied, and forms a conductive path between a drain and source of the MOS device when ESD voltage of a predetermined value or more is applied to the first node during a normal operation, and supplying the trigger signals to the trigger terminal of the ESD protective circuit when the first MOS device becomes conductive.

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patent: 6552594 (2003-04-01), Lin
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Office Action issued Dec. 14, 2007 by the Patent Office of the People's Republic of China re corresponding Chinese Patent Application No. 200510074623.4, including English-language translation thereof.

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