Electrostatic discharge protection utilizing microelectromechani

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

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361111, 29622, 438 52, H02H 322

Patent

active

059461764

ABSTRACT:
An integrated circuit having electrostatic discharge protection. The integrated circuit is built from a semiconducting substrate. A circuit is formed within the semiconductor substrate. The circuit has an input and a ground. A voltage activated microelectromechanical switch is fabricated within the semiconducting substrate utilizing integrated circuit techniques. The microelectromechanical switch is coupled across the circuit input and the circuit ground. The voltage activated microelectromechanical switch couples the circuit input to the circuit ground when an electrostatic discharge voltage of sufficient magnitude is applied to the input of the circuit such that the electrostatic discharge is dissipated to ground through the microelectromechanical switch thereby protecting the circuit from ESD.

REFERENCES:
patent: 5744840 (1998-04-01), Ng
patent: 5744841 (1998-04-01), Gilbert et al.
patent: 5745324 (1998-04-01), Forsland et al.
patent: 5798283 (1998-08-01), Montague et al.

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