Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-10-25
1998-10-27
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 33, 257358, 257359, 257363, 257537, 257663, 505191, 505239, 361 19, 361 58, 361104, H01L 2906, H01L 2900
Patent
active
058280782
ABSTRACT:
The present invention presents an electrostatic discharge and power surge protected circuit board (10) and method for providing an electrostatic discharge and power surge protected circuit board. The protected circuit board (10) includes temperature sensitive conducting material (14) and semiconductor circuit components (12). The temperature sensitive conducting material (14) has a critical current density, provides a high impedance when the critical current density is exceeded, and preferably comprises a high temperature superconductor. Preferably, the temperature sensitive conducting material (14) and the semiconductor circuit components (12) are coupled in series. In a method aspect of the present invention, an electrostatic discharge protected circuit board (10) is provided by providing a current carrying mechanism (16) on the circuit board (10), and coupling the current carrying mechanism (16) to temperature sensitive conducting material (14). Preferably, the temperature sensitive conducting material (14) is a high temperature superconductor, such as yttrium barium copper oxide.
REFERENCES:
patent: 4922367 (1990-05-01), Hideto
Denson-Low W. K.
Hughes Electronics
Lindeen III G. R.
Mintel William
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