Electrostatic discharge protection structures for high speed...

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

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Details

C361S111000, C361S118000, C361S091100

Reexamination Certificate

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07548401

ABSTRACT:
An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry is provided herein. In one embodiment, a circuit for protecting an integrated circuit from ESD includes a protected circuit node in the integrated circuit, a multiple stage transistor pump circuit coupled to the protected circuit node, and an electrostatic discharge protection circuit having a trigger coupled to the multiple stage transistor pump circuit. The multiple stage transistor pump circuit may comprise a Darlington transistor pump circuit.

REFERENCES:
patent: 5856214 (1999-01-01), Yu
patent: 5877927 (1999-03-01), Parat et al.
patent: 5978192 (1999-11-01), Young et al.
patent: 6353237 (2002-03-01), Yu
patent: 6411485 (2002-06-01), Chen et al.
patent: 6430016 (2002-08-01), Marr
patent: 7102864 (2006-09-01), Liu et al.
patent: 7285458 (2007-10-01), Manna et al.

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