Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Reexamination Certificate
2011-05-10
2011-05-10
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
C257S171000, C257S483000, C257S484000, C257S577000, C257SE27019, C360S323000, C361S017000, C361S272000
Reexamination Certificate
active
07939905
ABSTRACT:
According to an embodiment of the present invention, an electrostatic breakdown protection method protects a semiconductor device from a surge current impressed between a first terminal and a second terminal, the semiconductor device including: a diode impressing a forward-bias current from the first terminal to the second terminal; and a bipolar transistor impressing a current in a direction from the second terminal to the first terminal under an ON state, a continuity between a collector terminal and an emitter terminal of the bipolar transistor being attained before a potential difference between the first terminal and the second terminal reaches such a level that the diode is broken down.
REFERENCES:
patent: 2-133965 (1990-05-01), None
patent: 5-267588 (1993-10-01), None
patent: 2005-123533 (2005-05-01), None
Japanese Office Action dated Apr. 22, 2008 with a partial English translation.
McGinn Intellectual Property Law Group PLLC
Pham Thanh V
Renesas Electronics Corporation
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