Electrostatic discharge protection for semiconductor devices

Details Electrostatic discharge protection for semiconductor devices Electrostatic discharge protection for semiconductor devices

1986-10-01

1989-04-25

Macon, Robert S.

357 2313, 357 51, H01L 2348, H01L 2946

Patent

active

048252808

ABSTRACT:
Protection against damage due to electrostatic discharge is provided by the addition of elongate conductor ballast resistor strips (18, 20, 22) formed in series with the transistor device (10). The material forming the conductor strips (18, 20, 22) includes a positive temperature coefficient, thereby offsetting the negative temperature coefficient of the semiconductor material forming the transistor (10). Plural conductor strips are arranged in parallel to reduce the overall resistance to the transistor (10). High current density areas are prevented by providing a plurality of sub-transistors (48) formed in plural individual moats (40-46). The individual current paths reduce the formation of filaments caused by the high concentrations of current in a small area.

REFERENCES:
patent: 4605980 (1984-03-01), Hartranft et al.

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