Electrostatic discharge protection for metal-oxide-silicon feedb

Details Electrostatic discharge protection for metal-oxide-silicon feedb Electrostatic discharge protection for metal-oxide-silicon feedb

1995-03-24

1996-11-26

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 91, 361 56, H02H 900

Patent

active

055792006

ABSTRACT:
Electrostatic discharge protection circuitry is used to protect a MOS feedback element placed between pins such as oscillator input and an oscillator output pins. The ESD protection circuitry may include a first metal-oxide-silicon field effect transistor whose source and gate are electrically connected to the oscillator input pin and whose drain is electrically connected to the oscillator output pin and a second metal-oxide-silicon field effect transistor whose source and gate are electrically connected to the oscillator output pin and whose drain is electrically connected to the oscillator input pin.

REFERENCES:
patent: 3979642 (1976-09-01), Cath et al.
patent: 4048584 (1977-09-01), Ulmer
patent: 4060772 (1977-11-01), Yamada
patent: 4605980 (1986-08-01), Hartranft et al.
patent: 4745450 (1988-05-01), Hartranft et al.
patent: 4807080 (1989-02-01), Clark
patent: 4870530 (1989-09-01), Hurst

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