Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Reexamination Certificate
2007-10-05
2009-12-01
Jackson, Stephen W (Department: 2836)
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
Reexamination Certificate
active
07626790
ABSTRACT:
An electrostatic discharge protection circuit includes a first NMOS transistor and a second NMOS transistor cascode-connected between a high-voltage supply terminal (VDD) and an input pad (PAD), a third NMOS transistor and a fourth NMOS transistor cascode-connected between PAD and a low-voltage supply terminal (VSS), a first capacitor connected between VDD and a node VT that is connected to gate terminals of the second NMOS transistor and the third NMOS transistor, a second capacitor connected between the node VT and PAD, and a diode connected between VDD and the node VT.
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Hoang Ann T
Jackson Stephen W
Smartech Worldwide Limited
Wen Xin
LandOfFree
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